テラヘルツ関連 研究成果


　マイクロ波SIT関連

　SIサイリスタ関連

　SIダイオード関連

マイクロ波SIT関連

  1. J. Nishizawa, K. Motoya, and A. Itoh, ”The 2.45GHz 36W CW Si Recessed Gate Type SIT with High Gain and High Voltage Operation,” IEEE Trans. Electron Devices, Vol. 47, No.2, pp.482-478, (2000).

  2. J. Nishizawa, K. Motoya, and A. Itoh, ”High gain, high voltage static induction transistor with the recess gate structure,” in 9th SI Symp., SID-96-8, (1996).

  3. J. Nishizawa, et al., ”1 to 3GHz microwave SIT,” (in Japanese),in proc.6th SI Symp., SID-92-(1)-5, (1993).

  4. J. Nishizawa, and S. Suzuki, ”Microwave Static induction transistor(SIT),” in Proc.ISRAMAT, pp. 462-465, (1989).

  5. J. Nishizawa and K. Yamamoto, ”High-Frequency High-Power static induction transistor,” IEEE Trans. Electron Devices, Vol. ED-25, pp.314-322, (1978).

  6. J. Nishizawa, T. Terasaki, and J. Shibata, “Field effect transistor versus analog. transistor (static induction transistor),” IEEE Trans. Electron Devices, Vol. ED-22, pp. 185-197, (1975).

  7. J. Nishizawa ＆ Y. Watanabe, “High Frequency Power Gain of Drift -type Transistor,” SCI.REP.RITU, Vol.10, No.2, p.75, (1958).


SIサイリスタ関連

  1. J. Nishizawa, T. Tamamushi, K. Nonaka, and H. Watanabe, ”Fablication and optical switching results on the integrated light triggerd and quenched static induction thyristors,” IEEE Trans. On Electron Devices, Vol. ED-33, no.12, (1986).

  2. J. Nishizawa, T. Tamamushi, and K. Nonaka, ”Functional integration of the light-triggerd static induction thyristor and the static induction phototransistor,” IEEE Electron Device Lett., Vol. EDL-7, no. 4,pp. 265-267, (1986).

  3. J. Nishizawa, T. Tamamushi, K. Nonaka, and S. Shimomura, ”Fabrication and optical switching results of the double-gate (DG) static induction (SI) thyristor with the first planar-gate and the second buried-gate structure,” IEEE Electron Device Lett., Vol. EDL-7, no.3, pp. 175-178, (1986).

  4. K. Muraoka, Y. Kawamura, Y. Ohtsubo, S. Sugawara, T. Tamamushi and J. Nishizawa, ”Characteristics of the high speed SI thyristor and its application as the 60KHz, 100kW and the efficiency of more than 90％ inverter,” in IEEE PESC Res., pp. 94-103, (1986).

  5. J. Nishizawa, T. Tamamushi, and K. Nonaka, ”Totally light controlled static induction thyristor,” in Proc. 14th Europian Solid State Device Res. Conf. (ESS-DERC), (1984)； also, Physical, vol. 129B, pp. 346-350, (1985).

  6. J. Nishizawa, K. Muraoka, Y. Kawamura and T. Tamamushi, ”Low-loss high speed switching device, 2500V−300A static induction thyristor,” in IEEE PESC Rec., pp. 257-266, (1985)； also IEEE Trans. Electron Devices, Vol. ED-33, no.4, pp. 507-515,(1986).

  7. J. Nishizawa, K. Muraoka, T. Tamamushi and Y. Kawamura, ”Low-loss high speed switching devices, 2300V−150A static induction thyristor,”IEEE Trans, Electron Devices, Vol. ED-32, no.4, pp. 822-830, (1985).

  8. J. Nishizawa and T. Tamamushi, ”New Thyristor application to DC power transmission,” in Proc. IEEE 4th Int. Conf. AC and DC power transmission (London), pp. 304-309, (1985).

  9. J．Nishizawa, T. Tamamushi and K. Nonaka, “A very high sensitivity and very high speed light triggerd and light quenched static induction thyristor（LTQ SI Thy）” in IEDM Tech. Dig.（San Francisco）,p. 435, (1984).

  10. J. Nishizawa, T. Tamamushi and K. Nonaka, ”Totally light controlled thyristor – optically triggerble and optically quenchable static induction photo-thyristor,” in Proc. Int. Conf. Solid State Devices and Materials(ICSSDM),p. 321, (1984).

  11. J. Nishizawa, T. Terasaki, and J. Shibata, “Field effect transistor versus analog. transistor(static induction transistor),” IEEE Trans. Electron Devices, Vol. ED-22, pp.185-197, (1975).

  12. J. Nishizawa, T. Terasaki, and J. Shibata, “Field Effect Transistor and Analog Transistor ” Technical Report of Res. Inst. of Elect. Comm., at Tohoku University, RIEC TR-36, (1973)； IEEE Trans. on Electron Devices, Vol. ED-22, no.4, p.185,(1975) ；presented at IEDM (1972)；presented at ESSDERC (1973).


SIダイオード関連

  1. 西澤潤一、木村雅和, ″静電誘導デバイス−静電誘導効果を利用したダイオード-,″第１１回ＳＩデバイスシンポジウム講演論文集、ＳＳＩＤ-９８-３, pp. 13-20, (1998).

  2. J. Nishizawa and M. Kimura, ”Static Induction Diodes,” Proceeding of PCIM’98 Japan, pp. 41-46, (1998).

  3. J. Nishizawa, K. Muraoka, N. Shimizu, and M. Yura, ”Static Induction Emitter Diode,” Proceedings of Annual Meeting of the Asia-Pacific Society for Advanced Materials(APSAM-96),(1996).

  4. 由良昌士、清水尚博、李 根三、村岡公裕、西澤潤一「４ｋＶ 級高速ダイオードの試作」電気学会電子デバイス・半導体電力変換合同研究会資料ＥＤＤ-９５-７２、pp. 45-52, ＳＰＣ-９５-５５, (1995)

  5. J. Nishizawa, T. Terasaki, and J. Shibata, “Field effect transistor versus analog. transistor(static induction transistor),” IEEE Trans. Electron　Devices, Vol. ED-22, pp.185-197, (1975).

  6. J. Nishizawa, S. Iwase and Y. Watanabe, ”Simplified theory on the Inductive Impedance of p-n Junction,” Sci. Rep. Res. Inst. Tohoku Univ.A10 pp.45-57, (1958).



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